Novel heterostructured Ge nanowires based ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Novel heterostructured Ge nanowires based on polytype transformation
Author(s) :
Vincent, Laetitia [Auteur]
Institut d'électronique fondamentale [IEF]
Patriarche, Gilles [Auteur]
Laboratoire de photonique et de nanostructures [LPN]
Hallais, Géraldine [Auteur]
Institut d'électronique fondamentale [IEF]
Renard, Charles [Auteur]
Institut d'électronique fondamentale [IEF]
Gardès, Cyrille [Auteur]
Institut d'électronique fondamentale [IEF]
Troadec, David [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bouchier, Daniel [Auteur]
Institut d'électronique fondamentale [IEF]
Institut d'électronique fondamentale [IEF]
Patriarche, Gilles [Auteur]
Laboratoire de photonique et de nanostructures [LPN]
Hallais, Géraldine [Auteur]
Institut d'électronique fondamentale [IEF]
Renard, Charles [Auteur]
Institut d'électronique fondamentale [IEF]
Gardès, Cyrille [Auteur]
Institut d'électronique fondamentale [IEF]
Troadec, David [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bouchier, Daniel [Auteur]
Institut d'électronique fondamentale [IEF]
Journal title :
Nano Letters
Pages :
4828-4836
Publisher :
American Chemical Society
Publication date :
2014
ISSN :
1530-6984
English keyword(s) :
nanowires
phase-transformation
shear-stress
allotrope
heterostructure
phase-transformation
shear-stress
allotrope
heterostructure
HAL domain(s) :
Physique [physics]
English abstract : [en]
We report on a strain-induced phase transformation in Ge nanowires under external shear stresses. The resulted polytype heterostructure may have great potential for photonics and thermoelectric applications. ⟨111⟩-oriented ...
Show more >We report on a strain-induced phase transformation in Ge nanowires under external shear stresses. The resulted polytype heterostructure may have great potential for photonics and thermoelectric applications. ⟨111⟩-oriented Ge nanowires with standard diamond structure (3C) undergo a phase transformation toward the hexagonal diamond phase referred as the 2H-allotrope. The phase transformation occurs heterogeneously on shear bands along the length of the nanowire. The structure meets the common phenomenological criteria of a martensitic phase transformation. This point is discussed to initiate an on going debate on the transformation mechanisms. The process results in unprecedented quasiperiodic heterostructures 3C/2H along the Ge nanowire. The thermal stability of those 2H domains is also studied under annealing up to 650°C by in situ TEM.Show less >
Show more >We report on a strain-induced phase transformation in Ge nanowires under external shear stresses. The resulted polytype heterostructure may have great potential for photonics and thermoelectric applications. ⟨111⟩-oriented Ge nanowires with standard diamond structure (3C) undergo a phase transformation toward the hexagonal diamond phase referred as the 2H-allotrope. The phase transformation occurs heterogeneously on shear bands along the length of the nanowire. The structure meets the common phenomenological criteria of a martensitic phase transformation. This point is discussed to initiate an on going debate on the transformation mechanisms. The process results in unprecedented quasiperiodic heterostructures 3C/2H along the Ge nanowire. The thermal stability of those 2H domains is also studied under annealing up to 650°C by in situ TEM.Show less >
Language :
Anglais
Popular science :
Non
Source :
Files
- https://hal.archives-ouvertes.fr/hal-01058064/document
- Open access
- Access the document
- https://hal.archives-ouvertes.fr/hal-01058064/document
- Open access
- Access the document
- document
- Open access
- Access the document
- Vincent2014.pdf
- Open access
- Access the document