Title :

On wafer silicon integrated noise source characterization up to 110 GHz based on germanium-on-silicon photodiode

Author(s) :

Oeuvrard, Sandrine [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lampin, Jean-Francois [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lepilliet, Sylvie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Danneville, Francois [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Quemerais, Thomas [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Gloria, Daniel [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]

Conference title :

27th IEEE International Conference on Microelectronic Test Structures, ICMTS 2014

City :

Udine

Country :

Italie

Start date of the conference :

2014

Book title :

Proceedings of 27th IEEE International Conference on Microelectronic Test Structures, ICMTS 2014

Publication date :

2014

Keyword(s) :

ENR
Ge-on-Si photodiode
noise source
noise parameters extraction
optoelectronics bench
wire bonding

English abstract : [en]

In this work, a new concept of photonic noise source has been developed and characterized, based on Germanium-on-Silicon high speed photodiode (GeHSPD). This photodiode RF output power has been preliminary characterized ...
Show more >In this work, a new concept of photonic noise source has been developed and characterized, based on Germanium-on-Silicon high speed photodiode (GeHSPD). This photodiode RF output power has been preliminary characterized up to 210 GHz, using a dedicated optoelectronic bench and demonstrating available power in the range of -30 dBm. Its noise output power has been then measured using a noise receiver working in the W band in order to determine this photonic noise source Excess Noise Ratio (ENR). After refined measurements and calculations, it turns out that its ENR was found in the range of 30 dB in the W band, confirming the potential of this device to be used as a noise source.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL