Design of GaN based optical modulator with ...
Document type :
Article dans une revue scientifique
Title :
Design of GaN based optical modulator with Mach-Zehnder interferometer structure
Author(s) :
Purnamaningsih, R.W. [Auteur]
Poespawati, N.R. [Auteur]
Saraswati, Irma [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dogheche, El Hadj [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Poespawati, N.R. [Auteur]
Saraswati, Irma [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dogheche, El Hadj [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
WSEAS Transactions on Communications
Pages :
229-233
Publisher :
World Scientific and Engineering Academy and Society (WSEAS)
Publication date :
2014
ISSN :
1109-2742
English abstract : [en]
In this work we have designed a Mach Zehnder interferometer (MZI) for electro optic modulator at telecommunication wavelength using GaN on Sapphire. The knowledge of GaN sample optical properties were also investigated, ...
Show more >In this work we have designed a Mach Zehnder interferometer (MZI) for electro optic modulator at telecommunication wavelength using GaN on Sapphire. The knowledge of GaN sample optical properties were also investigated, resulting refractive index for the GaN layers were found to be nTE=2.279±0.001 and nTM = 2.316±0.001 and good temperatur stability. Optimization of the structure parameters and electrodes required for this structure was conducted accurately by theoretical tools using BPM methods. The results showed possibility to realize GaN based MZI for future optical modulator devices.Show less >
Show more >In this work we have designed a Mach Zehnder interferometer (MZI) for electro optic modulator at telecommunication wavelength using GaN on Sapphire. The knowledge of GaN sample optical properties were also investigated, resulting refractive index for the GaN layers were found to be nTE=2.279±0.001 and nTM = 2.316±0.001 and good temperatur stability. Optimization of the structure parameters and electrodes required for this structure was conducted accurately by theoretical tools using BPM methods. The results showed possibility to realize GaN based MZI for future optical modulator devices.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Source :