Titre :

Optical properties of nanoporous gallium nitride for photonic applications

Auteur(s) :

Alshehri, Bandar [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la manifestation scientifique :

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014

Ville :

Villeneuve d'Ascq

Pays :

France

Date de début de la manifestation scientifique :

2014

Titre de l’ouvrage :

Actes des 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014

Date de publication :

2014

Résumé en anglais : [en]

The aim of this research is to characterize the optical properties of a gallium nitride thin film grown on sapphire by MOCVD. Nanoporous of gallium nitride are formed by electrochemical etching. Refractive index, thickness ...
Lire la suite >The aim of this research is to characterize the optical properties of a gallium nitride thin film grown on sapphire by MOCVD. Nanoporous of gallium nitride are formed by electrochemical etching. Refractive index, thickness and birefringence are extracted from the nanoporous thin film. Prism coupling and spectroscopic ellipsometry were used to evaluate the refractive index and extinction coefficient of nanoporous GaN and the results were compared with the properties of bulk GaN. Optical properties of GaN can be tuned by controlling the pores density (pore size and interdistance). The refractive index of nanoporous GaN decreased by increasing the pore density. The measured optical properties of nanoporous GaN is significant for designing optical devices based on an index-controlled nanoporous layer. Nanoporous GaN samples have been characterized by SEM and TEM analysis to optimize the porosity of each rate. Relation between the optical properties and the resultant microstructure are investigated by the extraction of effective indices for TE and TM modes by using two different techniques, the prism coupling and the ellipsometry at different wavelengths. The index dispersion for the nanostructured GaN is compared to the GaN homogenous layers. Refractive index extracted by prism coupling at 633nm has been done with index n0 equal to 2.347 for bulk GaN while it is 2.336 for a pores density of 20% GaN.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Non spécifiée

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL