Title :

Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

Author(s) :

Kurita, Y. [Auteur]
Research Institute of Electrical Communication [Sendai] [RIEC]
Ducournau, Guillaume [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Coquillat, D. [Auteur]
Laboratoire Charles Coulomb [L2C]
Satou, A. [Auteur]
Research Institute of Electrical Communication [Sendai] [RIEC]
Kobayashi, K. [Auteur]
Research Institute of Electrical Communication [Sendai] [RIEC]
Boubanga-Tombet, S. [Auteur]
Research Institute of Electrical Communication [Sendai] [RIEC]
Meziani, Y.M. [Auteur]
Popov, V.V. [Auteur]
Kotelnikov Institute of Radio Engineering and Electronics [IRE]
Knap, W. [Auteur]
Laboratoire Charles Coulomb [L2C]
Suemitsu, T. [Auteur]
Research Institute of Electrical Communication [Sendai] [RIEC]
Otsuji, T. [Auteur]
Research Institute of Electrical Communication [Sendai] [RIEC]

Journal title :

Applied Physics Letters

Pages :

251114

Publisher :

American Institute of Physics

Publication date :

2014

ISSN :

0003-6951

English keyword(s) :

plasmons
MODFETs
terahertz detectors
photoelectric conversion
biosensors

HAL domain(s) :

Sciences de l'ingénieur [physics]/Electronique
Physique [physics]/Physique [physics]/Instrumentations et Détecteurs [physics.ins-det]

English abstract : [en]

We report on room-temperature plasmonic detection of sub-terahertz radiation by InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric dual-grating-gate structure. Maximum responsivities of 22.7 kV/W at ...
Show more >We report on room-temperature plasmonic detection of sub-terahertz radiation by InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric dual-grating-gate structure. Maximum responsivities of 22.7 kV/W at 200 GHz and 21.5 kV/W at 292 GHz were achieved under unbiased drain-to-source condition. The minimum noise equivalent power was estimated to be 0.48 pW/Hz0.5 at 200 GHz at room temperature, which is the record-breaking value ever reported for plasmonic THz detectors. Frequency dependence of the responsivity in the frequency range of 0.2-2 THz is in good agreement with the theory.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL