Scanning tunneling microscopy of GaAs/GaAsSb ...
Document type :
Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes
Title :
Scanning tunneling microscopy of GaAs/GaAsSb nanowires
Author(s) :
Díaz Álvarez, Adrian [Auteur]
Capiod, Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Berthe, Maxime [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Xu, Tao [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nys, Jean-Philippe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lefebvre, Isabelle [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Caroff, Philippe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ebert, Philipp [Auteur]
Grandidier, Bruno [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Capiod, Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Berthe, Maxime [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Xu, Tao [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nys, Jean-Philippe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lefebvre, Isabelle [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Caroff, Philippe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ebert, Philipp [Auteur]
Grandidier, Bruno [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Conference title :
European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium E - Defect-induced effects in nanomaterials
City :
Lille
Country :
France
Start date of the conference :
2014
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
Understanding surface structure and surface composition is of particular importance for semiconductor nanowire applications, since they might strongly contribute to the electrical, optical and thermal properties of the ...
Show more >Understanding surface structure and surface composition is of particular importance for semiconductor nanowire applications, since they might strongly contribute to the electrical, optical and thermal properties of the Nanowires. A prototypical material is GaAs, where polytype inclusions consisting of zinc-blende (ZB) and wurtzite (WZ) segments form during the growth of nanowires, in particular when Sb atoms are incorporated. Here, we will investigate the structural and electronic properties of GaAs and GaAsSb nanowires with scanning tunneling microscopy and spectroscopy. These techniques gives access to the nanofaceting morphology of a single semiconductor nanowire with a detailed picture of the sidewall structural and compositional properties at the atomic scale. It will also be used to measure the band gap and the position of the Fermi level at the surface. In particular, we will show that the ZB_WZ structures on the surface of GaAs nanowires naturally introduce p-i juntions solely due to the Fermi level pinning at different energies on the non-polar WZ and ZB sidewall facets.Show less >
Show more >Understanding surface structure and surface composition is of particular importance for semiconductor nanowire applications, since they might strongly contribute to the electrical, optical and thermal properties of the Nanowires. A prototypical material is GaAs, where polytype inclusions consisting of zinc-blende (ZB) and wurtzite (WZ) segments form during the growth of nanowires, in particular when Sb atoms are incorporated. Here, we will investigate the structural and electronic properties of GaAs and GaAsSb nanowires with scanning tunneling microscopy and spectroscopy. These techniques gives access to the nanofaceting morphology of a single semiconductor nanowire with a detailed picture of the sidewall structural and compositional properties at the atomic scale. It will also be used to measure the band gap and the position of the Fermi level at the surface. In particular, we will show that the ZB_WZ structures on the surface of GaAs nanowires naturally introduce p-i juntions solely due to the Fermi level pinning at different energies on the non-polar WZ and ZB sidewall facets.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Nationale
Popular science :
Non
Source :