Optical and microstructural properties ...
Document type :
Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes
Title :
Optical and microstructural properties into nanoporous GaN films grown on sapphire by metal organic chemical vapor deposition
Author(s) :
Alshehri, Bandar [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lee, S.-M. [Auteur]
Kang, J.-H. [Auteur]
Dogheche, Karim [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gong, S.-H. [Auteur]
Ryu, S.-W. [Auteur]
Dumont, E. [Auteur]
Cho, Y.-H. [Auteur]
Dogheche, El Hadj [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lee, S.-M. [Auteur]
Kang, J.-H. [Auteur]
Dogheche, Karim [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gong, S.-H. [Auteur]
Ryu, S.-W. [Auteur]
Dumont, E. [Auteur]
Cho, Y.-H. [Auteur]
Dogheche, El Hadj [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Conference title :
European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond
City :
Lille
Country :
France
Start date of the conference :
2014
English abstract : [en]
Gallium Nitride (GaN) thin films have been prepared on sapphire by metal organic chemical vapor deposition (MOCVD) technique and a chemical etching method using KOH is used to develop nanoporous structures [1]. We present ...
Show more >Gallium Nitride (GaN) thin films have been prepared on sapphire by metal organic chemical vapor deposition (MOCVD) technique and a chemical etching method using KOH is used to develop nanoporous structures [1]. We present comparative investigations of porous and nonporous GaN layers. While the pores density is determined, we have investigated the microstructures in GaN films by using transmission electron microscopy (TEM). The refractive index dispersion has been evaluated through different techniques, ellipsometry and guided-wave prism coupling [2]. We have correlated the microstructure with the refractive index of the material. The aim of this research is to demonstrate that optical properties of GaN can be tuned by controlling the pores size and spacing. For a pores density of 20%, we report an index variation ∆n= -12*10-3. The control of the refractive index into GaN is therefore fundamental for the design of active and passive optical devices [1] S-H Gong, A. Stolz,G-H Myeong, E. Dogheche, A. Gokarna, S-W Ryu, D. Decoster, Y-H Cho, Optics letters, vol 36 no.21, pp4272-4274, nov 2011. [2] Y-H Lee, J-H Kang, S-W Ryu, Thin Solid Films, vol.540 150 (2013).Show less >
Show more >Gallium Nitride (GaN) thin films have been prepared on sapphire by metal organic chemical vapor deposition (MOCVD) technique and a chemical etching method using KOH is used to develop nanoporous structures [1]. We present comparative investigations of porous and nonporous GaN layers. While the pores density is determined, we have investigated the microstructures in GaN films by using transmission electron microscopy (TEM). The refractive index dispersion has been evaluated through different techniques, ellipsometry and guided-wave prism coupling [2]. We have correlated the microstructure with the refractive index of the material. The aim of this research is to demonstrate that optical properties of GaN can be tuned by controlling the pores size and spacing. For a pores density of 20%, we report an index variation ∆n= -12*10-3. The control of the refractive index into GaN is therefore fundamental for the design of active and passive optical devices [1] S-H Gong, A. Stolz,G-H Myeong, E. Dogheche, A. Gokarna, S-W Ryu, D. Decoster, Y-H Cho, Optics letters, vol 36 no.21, pp4272-4274, nov 2011. [2] Y-H Lee, J-H Kang, S-W Ryu, Thin Solid Films, vol.540 150 (2013).Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Source :