Titre :

Optical and microstructural properties into nanoporous GaN films grown on sapphire by metal organic chemical vapor deposition

Auteur(s) :

Alshehri, Bandar [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lee, S.-M. [Auteur]
Kang, J.-H. [Auteur]
Dogheche, Karim [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gong, S.-H. [Auteur]
Ryu, S.-W. [Auteur]
Dumont, E. [Auteur]
Cho, Y.-H. [Auteur]
Dogheche, El Hadj [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la manifestation scientifique :

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond

Ville :

Lille

Pays :

France

Date de début de la manifestation scientifique :

2014

Résumé en anglais : [en]

Gallium Nitride (GaN) thin films have been prepared on sapphire by metal organic chemical vapor deposition (MOCVD) technique and a chemical etching method using KOH is used to develop nanoporous structures [1]. We present ...
Lire la suite >Gallium Nitride (GaN) thin films have been prepared on sapphire by metal organic chemical vapor deposition (MOCVD) technique and a chemical etching method using KOH is used to develop nanoporous structures [1]. We present comparative investigations of porous and nonporous GaN layers. While the pores density is determined, we have investigated the microstructures in GaN films by using transmission electron microscopy (TEM). The refractive index dispersion has been evaluated through different techniques, ellipsometry and guided-wave prism coupling [2]. We have correlated the microstructure with the refractive index of the material. The aim of this research is to demonstrate that optical properties of GaN can be tuned by controlling the pores size and spacing. For a pores density of 20%, we report an index variation ∆n= -12*10-3. The control of the refractive index into GaN is therefore fundamental for the design of active and passive optical devices [1] S-H Gong, A. Stolz,G-H Myeong, E. Dogheche, A. Gokarna, S-W Ryu, D. Decoster, Y-H Cho, Optics letters, vol 36 no.21, pp4272-4274, nov 2011. [2] Y-H Lee, J-H Kang, S-W Ryu, Thin Solid Films, vol.540 150 (2013).Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Non spécifiée

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL