Title :

Design and fabrication of uni-travelling carrier (UTC) photodiode based on InxGa1-xN semiconductors

Author(s) :

Alshehri, Bandar [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dogheche, Karim [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Seetoh, P.I. [Auteur]
Teng, J.H. [Auteur]
Chua, S.J. [Auteur]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dogheche, El Hadj [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond

City :

Lille

Country :

France

Start date of the conference :

2014

English abstract : [en]

This work is focused both on InxGa1-xN single-layer and InxGa1-xN/GaN multilayered structures, with high Indium content (x>35%). In this study, InGaN/GaN films are epitaxially grown on sapphire substrates by metalorganic ...
Show more >This work is focused both on InxGa1-xN single-layer and InxGa1-xN/GaN multilayered structures, with high Indium content (x>35%). In this study, InGaN/GaN films are epitaxially grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The microstructure of GaN and InxGa1-xN thin films are characterized by SEM/AFM/TEM [1] and optically by prism coupling/ ellipsometry for the refractive indices [2]. We focus here on the design and the fabrication of ultra-fast photodiodes operating in visible wavelength range. Different configurations for UTC photodiodes have been fabricated (sizes ranging from 2.5 to 50µm) and the technological processes optimized including dry etching processes for patterning GaN/InGaN layers. Ti/Al/Ni/Au and ITO materials for p and n type contacts are also investigated. [1] A. Gokarna, A. Gauthier-Brun, W. Liu, Y. Androussi, E. Dumont, E. Dogheche, J. H. Teng, S.J. Chua, D. Decoster, Applied Physics Letters ,Vol.96 , Issue: 19, May 2010. [2] A. Gauthier- Brun, J.H. Teng, E. Dogheche, Wei Liu, M Tonouchi A. Gokarna, S.J. Chua, D. Decoster, Properties of InxGa1-xN films in Terahertz range, Applied Physics Letter, 100, 071913 (2012)Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL