Titre :

Phosphorus-hyperdoped Si nanocrystals : a model for localized surface plasmon resonance

Auteur(s) :

Pi, X. [Auteur]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la manifestation scientifique :

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments

Ville :

Lille

Pays :

France

Date de début de la manifestation scientifique :

2014

Résumé en anglais : [en]

It has been recently realized that semiconductor nanocrystals can be doped with point defects or impurities up to a very high level, sometimes above the bulk solubility limit. In parallel, hyperdoping has also emerged as ...
Lire la suite >It has been recently realized that semiconductor nanocrystals can be doped with point defects or impurities up to a very high level, sometimes above the bulk solubility limit. In parallel, hyperdoping has also emerged as a promising means to change the electrical and optical properties of Si. In the present work, we show theoretically that Localized Surface Plasmon Resonance (LSPR) may occur in P-hyperdoped Si nanocrystals, which could greatly contribute to the development of Si based plasmonics [1]. Considering a model system using self-consistent tight binding calculations, we study how the sub-bandgap optical absorption changes with nanocrystal size and doping concentration and we propose a simple model which explains the results. We determine the conditions required to observe LSPR in hyperdoped semiconductor nanocrystals. We explain why the introduction of deep defects in the nanocrystals does not induce LSPR while the introduction of hydrogenic impurities does. [1] X. Pi and C. Delerue, Phys. Rev. Lett. 111, 177402 (2013).Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Non spécifiée

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL