Title :

Current-voltage characteristics of (Mo/Au)/AlGaN/GaN/Si Schottky diodes

Author(s) :

Mosbahi, H. [Auteur]
Charfeddine, M. [Auteur]
Gassoumi, M. [Auteur]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zaidi, M.A. [Auteur]
Maaref, H. [Auteur]

Conference title :

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments

City :

Lille

Country :

France

Start date of the conference :

2014

English abstract : [en]

The AlGaN/GaN high electron mobility transistors (HEMTs) is a promising candidate for microwave applications due to its high power and high temperature. owing to their large and direct band gap, as well as favorable transport ...
Show more >The AlGaN/GaN high electron mobility transistors (HEMTs) is a promising candidate for microwave applications due to its high power and high temperature. owing to their large and direct band gap, as well as favorable transport properties. Moreover, III-V nitrides could be suitable for the emitters and detectors of green and shorter wavelengths, in turn making investments in this class of materials more than worthwhile. The electrical characteristics of metal contactst on-GaN have been examined by numerous research groups. The mechanism of leakage currents through GaN and AlGaN Schottky interfaces is discussed using temperature- dependent current-voltage (I-V-T) measurements, and found that the barrier thinning caused by unintentional surface-defect donors enhances the tunneling transport processes, leading to large leakage currents through GaN and AlGaN Schottky interfaces. Key world: AlGaN/GaN, HEMTs, I-V, Schottky barrier height, Barrier inhomogeneity.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL