Limitations of the impulse response of ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
Limitations of the impulse response of GaAs MSM photoswitch
Auteur(s) :
Benzeghda, Sabah [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laboratoire de recherche microsystèmes et instrumentation [LMI]
Hobar, Farida [Auteur]
Laboratoire de recherche microsystèmes et instrumentation [LMI]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lampin, Jean-Francois [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laboratoire de recherche microsystèmes et instrumentation [LMI]
Hobar, Farida [Auteur]
Laboratoire de recherche microsystèmes et instrumentation [LMI]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lampin, Jean-Francois [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
International Journal of Advances in Engineering and Technology
Pagination :
75-81
Date de publication :
2014
Mot(s)-clé(s) en anglais :
impulse response
MSM photodetector
space charge
MSM photodetector
space charge
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
As symmetrical data characteristics I (V) of the Metal-Semiconductor-Metal (MSM) photodetector, we wondered how this device can be used as a photoswitch as well as the low temperature on GaAs photoconductive generally used ...
Lire la suite >As symmetrical data characteristics I (V) of the Metal-Semiconductor-Metal (MSM) photodetector, we wondered how this device can be used as a photoswitch as well as the low temperature on GaAs photoconductive generally used for this purpose. The impulse response of interdigitated metal-semiconductor-metal photoswitch fabricated on GaAs non-intentional doped (NID) absorbing layer is investigated. The photocurrent response was measured after excitation and we found that the screening of the dark electric field and charge accumulation exceedingly modify the drift conditions of the photogenerated electrons and holes in active region of the MSM photoswitch.Lire moins >
Lire la suite >As symmetrical data characteristics I (V) of the Metal-Semiconductor-Metal (MSM) photodetector, we wondered how this device can be used as a photoswitch as well as the low temperature on GaAs photoconductive generally used for this purpose. The impulse response of interdigitated metal-semiconductor-metal photoswitch fabricated on GaAs non-intentional doped (NID) absorbing layer is investigated. The photocurrent response was measured after excitation and we found that the screening of the dark electric field and charge accumulation exceedingly modify the drift conditions of the photogenerated electrons and holes in active region of the MSM photoswitch.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :