Focused ion beam Ga3+ for the realization of piezoelectric PZT nano structures

Remiens, Denis

Document type :

Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes

Title :

Focused ion beam Ga3+ for the realization of piezoelectric PZT nano structures

Author(s) :

Remiens, Denis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

3rd International Conference on Nanotek & Expo

City :

Las Vegas, NV

Country :

Etats-Unis d'Amérique

Start date of the conference :

2013

English abstract : [en]

Piezoelectric nano-structures (islands of dimensions in the lateral size range 50-500 nm) have been fabricated by Focused Ga3+ Ion Beam (FIB) etching on PbZr0.54Ti0.46O3 thin films obtained by magnetron sputtering. The ...
Show more >Piezoelectric nano-structures (islands of dimensions in the lateral size range 50-500 nm) have been fabricated by Focused Ga3+ Ion Beam (FIB) etching on PbZr0.54Ti0.46O3 thin films obtained by magnetron sputtering. The degradation induced by the etching process is investigated through the evolution of electromechanical activity measured by means of local piezoelectric hysteresis loops produced by Piezo-response Force Microscopy (PFM). Two kinds of structures, namely one based on crystallized films and the other based on amorphous ones, were studied. In this latter case, the amorphous films are post-annealed after etching to obtain crystallized structure. For the structures based on the crystallized and then etched films, no piezoelectric signal was registered that evidences a serious degradation of material induced by Ga3+ ion implantation. For the structures based on the films etched in amorphous state and then crystallized the piezo response signal was near to that the reference films (crystallized and not etched) whatever were the ion dose and the island dimensions. Even for very small lateral size (50 nm), no size effect was observed. The island shapes fabricated by Ga3+ FIB etching process (islands with less than 50 nm lateral size) show a limitation of FIB processing and electron beam lithography seems to be necessary.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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