Doped semiconductor nanocrystal junctions
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Doped semiconductor nanocrystal junctions
Author(s) :
Borowik, Lukasz [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nguyen-Tran, Thuat [Auteur]
Laboratoire de physique des interfaces et des couches minces [Palaiseau] [LPICM]
Roca I Cabarrocas, Pere [Auteur]
Laboratoire de physique des interfaces et des couches minces [Palaiseau] [LPICM]
Melin, Thierry [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nguyen-Tran, Thuat [Auteur]
Laboratoire de physique des interfaces et des couches minces [Palaiseau] [LPICM]
Roca I Cabarrocas, Pere [Auteur]
Laboratoire de physique des interfaces et des couches minces [Palaiseau] [LPICM]
Melin, Thierry [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Journal of Applied Physics
Pages :
204305, 5 pages
Publisher :
American Institute of Physics
Publication date :
2013
ISSN :
0021-8979
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND 1020 1021cm 3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin ...
Show more >Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND 1020 1021cm 3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as N 1=3 D , and depleted charge linearly increasing with the NC diameter and varying as N1=3 D . We thus establish a "nanocrystal counterpart" of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.Show less >
Show more >Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND 1020 1021cm 3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as N 1=3 D , and depleted charge linearly increasing with the NC diameter and varying as N1=3 D . We thus establish a "nanocrystal counterpart" of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.Show less >
Language :
Anglais
Popular science :
Non
ANR Project :
Source :
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