Doped semiconductor nanocrystal junctions

Borowik, Lukasz; Nguyen-Tran, Thuat; Roca I Cabarrocas, Pere; Melin, Thierry

Document type :

Article dans une revue scientifique

DOI :

10.1063/1.4834516

Title :

Doped semiconductor nanocrystal junctions

Author(s) :

Borowik, Lukasz [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nguyen-Tran, Thuat [Auteur]
Laboratoire de physique des interfaces et des couches minces [Palaiseau] [LPICM]
Roca I Cabarrocas, Pere [Auteur]
Laboratoire de physique des interfaces et des couches minces [Palaiseau] [LPICM]
Melin, Thierry [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Journal of Applied Physics

Pages :

204305, 5 pages

Publisher :

American Institute of Physics

Publication date :

2013

ISSN :

0021-8979

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND 1020 1021cm 3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin ...
Show more >Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND 1020 1021cm 3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as N 1=3 D , and depleted charge linearly increasing with the NC diameter and varying as N1=3 D . We thus establish a "nanocrystal counterpart" of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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