A study on effect of wafer bow in wafer-level ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
A study on effect of wafer bow in wafer-level BCB cap transfer packaging
Author(s) :
Seok, Seonho [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kim, Janggil [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kim, Janggil [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Microsystem Technologies
Pages :
215-219
Publisher :
Springer Verlag
Publication date :
2014
ISSN :
0946-7076
English abstract : [en]
This paper investigates the effects of wafer bow of Si carrier wafer to achieve high-yield BCB cap transfer in wafer-scale packaging. BCB caps are built-up on Si carrier wafer and then they are bonded and transferred to a ...
Show more >This paper investigates the effects of wafer bow of Si carrier wafer to achieve high-yield BCB cap transfer in wafer-scale packaging. BCB caps are built-up on Si carrier wafer and then they are bonded and transferred to a target wafer. The height of BCB cap is 25 lm and the thickness of Si carrier wafer is 380 lm. Through several experiments, it is found that BCB cap transfer rate is mainly dependent on wafer bow of Si carrier wafer rather than that of the target wafer due to relatively large thickness of BCB caps. Therefore, Si carrier wafer bow with the BCB layers is investigated as a function of temperature. It is to figure out the effect of the wafer bow at certain temperature and applying pressure on BCB cap transfer rate. Through the study, it is found that zero wafer bow is very important for the cap transfer. Hence, aluminum metal layer is introduced to compensate the existing wafer bow of the Si carrier wafer.Show less >
Show more >This paper investigates the effects of wafer bow of Si carrier wafer to achieve high-yield BCB cap transfer in wafer-scale packaging. BCB caps are built-up on Si carrier wafer and then they are bonded and transferred to a target wafer. The height of BCB cap is 25 lm and the thickness of Si carrier wafer is 380 lm. Through several experiments, it is found that BCB cap transfer rate is mainly dependent on wafer bow of Si carrier wafer rather than that of the target wafer due to relatively large thickness of BCB caps. Therefore, Si carrier wafer bow with the BCB layers is investigated as a function of temperature. It is to figure out the effect of the wafer bow at certain temperature and applying pressure on BCB cap transfer rate. Through the study, it is found that zero wafer bow is very important for the cap transfer. Hence, aluminum metal layer is introduced to compensate the existing wafer bow of the Si carrier wafer.Show less >
Language :
Anglais
Popular science :
Non
Source :