AlN/IDT/AlN/Sapphire as packageless structure ...
Document type :
Communication dans un congrès avec actes
DOI :
Title :
AlN/IDT/AlN/Sapphire as packageless structure for SAW applications in harsh environments
Author(s) :
Legrani, Ouarda [Auteur]
Institut Jean Lamour [IJL]
Elmazria, Omar [Auteur]
Institut Jean Lamour [IJL]
Bartasyte, A. [Auteur]
Institut Jean Lamour [IJL]
Aubert, Thierry [Auteur]
Laboratoire SYstèmes et Matériaux pour la MEcatronique [SYMME]
Talbi, Abdelkrim [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut Jean Lamour [IJL]
Elmazria, Omar [Auteur]
Institut Jean Lamour [IJL]
Bartasyte, A. [Auteur]
Institut Jean Lamour [IJL]
Aubert, Thierry [Auteur]
Laboratoire SYstèmes et Matériaux pour la MEcatronique [SYMME]
Talbi, Abdelkrim [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Conference title :
IEEE International Ultrasonics Symposium
Country :
Allemagne
Start date of the conference :
2012
Book title :
Proceedings of IEEE International Ultrasonics Symposium
Publication date :
2012-10
English abstract : [en]
Packageless heterostructure AlN/IDT/AlN/Sapphire was investigated as a solution protection of the interdigital transducer against agglomeration phenomena at high temperature. For this purpose, the performance of conventional ...
Show more >Packageless heterostructure AlN/IDT/AlN/Sapphire was investigated as a solution protection of the interdigital transducer against agglomeration phenomena at high temperature. For this purpose, the performance of conventional IDT/AlN/Sapphire and protected AlN/IDT/AlN/Sapphire heterostructures were compared. The capability of AlN protective thin film to minimize the deterioration of electrodes was shown.Show less >
Show more >Packageless heterostructure AlN/IDT/AlN/Sapphire was investigated as a solution protection of the interdigital transducer against agglomeration phenomena at high temperature. For this purpose, the performance of conventional IDT/AlN/Sapphire and protected AlN/IDT/AlN/Sapphire heterostructures were compared. The capability of AlN protective thin film to minimize the deterioration of electrodes was shown.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :