Title :

Pulsed power operation of power limiters integrating a phase transition material

Author(s) :

Crunteanu, Aurelian [Auteur correspondant]
MINACOM [XLIM-MINACOM]
Lemoine, Emilien [Auteur]
MINACOM [XLIM-MINACOM]
Leroy, Jonathan [Auteur]
MINACOM [XLIM-MINACOM]
Passerieux, Damien [Auteur]
OSA [XLIM-OSA]
Lévêque, Philippe [Auteur]
OSA [XLIM-OSA]
Blondy, Pierre [Auteur]
MINACOM [XLIM-MINACOM]
Gaquière, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducatteau, D. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Orlianges, Jean-Christophe [Auteur]
Axe 2 : procédés de traitements de surface
Champeaux, Corinne [Auteur]
Axe 2 : procédés de traitements de surface

Conference title :

IEEE MTT−S International Microwave Symposium

City :

Seattle

Country :

Etats-Unis d'Amérique

Start date of the conference :

2013-06-02

Book title :

IEEE MTT−S International Microwave Symposium Digest

Publication date :

2013-06-02

English keyword(s) :

coplanar waveguides
microwave power limiters phase transition material
pulsed power
vanadium dioxide

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

We present the operation of microwave power limiters based on reversible phase transition of vanadium dioxide thin films integrated on coplanar waveguides submitted to incident pulsed peak power at 10 GHz. During the pulse ...
Show more >We present the operation of microwave power limiters based on reversible phase transition of vanadium dioxide thin films integrated on coplanar waveguides submitted to incident pulsed peak power at 10 GHz. During the pulse on-time, the fabricated devices can be reversibly driven by the incident signal from a high transmission state to a low-transmission level on a relatively short timescale (response times as low as 4 microseconds for incident peak powers of 35 dBm). The broadband operation and the simplicity of fabrication and integration of these devices, their potential for faster response times, make them attractive as protective devices against continuous or transient RF power.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL