Titre :

Modelling and engineering of stress based controlled oxidation effects for silicon nanostructures patterning

Auteur(s) :

Han, Xiang-Lei [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Larrieu, Guilhem [Auteur correspondant]
Équipe Matériaux et Procédés pour la Nanoélectronique [LAAS-MPN]
Krzeminski, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

Nanotechnology

Pagination :

495301

Éditeur :

Institute of Physics

Date de publication :

2013-11-14

ISSN :

0957-4484

Mot(s)-clé(s) :

ingénerie
transistors verticaux ultimes
modelisation
oxydation du silicium
nanofils

Discipline(s) HAL :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]

Résumé en anglais : [en]

Silicon nanostructure patterning with a tight geometry control is an important challenge at the bottom level. In that context, stress based controlled oxidation appears as an efficient tools for precise nanofabrication. ...
Lire la suite >Silicon nanostructure patterning with a tight geometry control is an important challenge at the bottom level. In that context, stress based controlled oxidation appears as an efficient tools for precise nanofabrication. Here, we investigate stress-retarded oxidation phenomenon in various silicon nanostructures (nanobeams, nanorings and nanowires) both at the experimental and theoretical levels. Different silicon nanostructures have been fabricated by a top-down approach. A complex dependence of the stress build-up with the nanoobjects dimension, shape and size have been demonstrated experimentally and physically explained by modelling. For the oxidation of a two dimensional nanostructure (nanobeam), a relative independence to size effects have been observed. On the other side, a radial stress increase with geometry downscaling of one dimensional nanostructure (nanowire) have been carefully emphasised. The study of the shape engineering by retarded oxidation effects for vertical silicon nanowires is finally discussed.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Commentaire :

Rapport LAAS N°13389

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL