Title :

Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT

Author(s) :

Telia, A. [Auteur]
Bellakhdar, A. [Auteur]
Semra, L. [Auteur]
Soltani, A. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

2nd Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013

City :

Riyadh

Country :

Arabie Saoudite

Start date of the conference :

2013

Book title :

Proceedings of 2nd Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013

Publication date :

2013

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

In this work the effects of technological and electrical parameters of Al m Ga 1-m N/GaN High Electron Mobility Transistors (HEMT) on the output conductance "gd" was studied in the first part. In the second part, the effect ...
Show more >In this work the effects of technological and electrical parameters of Al m Ga 1-m N/GaN High Electron Mobility Transistors (HEMT) on the output conductance "gd" was studied in the first part. In the second part, the effect on gd of thermal and self heating in the device was analyzed. This study was made by taking into account the effects of spontaneous and piezoelectric polarizations in the heterojunction AlGaN/GaN and the relaxation of the crystal lattice induced by the aluminum mole fraction. An analytical model for the electrons concentration "ns" in the 2DEG and the current Ids in the channel for strong inversion regime was presented. By solving the Poisson equation and Schrödinger self-consistent calculations, including the spontaneous and piezoelectric polarizations, lattice relaxation, self heating and thermal effects the current I ds was calculated. The output conductance g d according to the voltage V ds are deduced thanks to the analytical description of the calculated current I ds .Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL