Title :

Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations

Author(s) :

Ge, J. [Auteur]
Shanghai Institute of Ceramics
Remiens, Denis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Costecalde, J. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chen, Y. [Auteur]
Shanghai Institute of Ceramics
Dong, X.L. [Auteur]
Shanghai Institute of Ceramics
Wang, G.S. [Auteur]
Shanghai Institute of Ceramics

Journal title :

Applied Physics Letters

Pages :

162903

Publisher :

American Institute of Physics

Publication date :

2013

ISSN :

0003-6951

HAL domain(s) :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]

English abstract : [en]

The effect of residual stress on energy storage property was investigated for a series of PbZrO3 thin films on SrTiO3 and Si substrates. Compressive or tensile residual stress influences the critical electric field EA for ...
Show more >The effect of residual stress on energy storage property was investigated for a series of PbZrO3 thin films on SrTiO3 and Si substrates. Compressive or tensile residual stress influences the critical electric field EA for the ferroelectric-to-antiferroelectric phase transition, thus for films with (110)/(101) orientation, energy density W of films on SrTiO3 is 38% larger than films on Si; in contrast, (001)-oriented PbZrO3 films on SrTiO3 show slightly smaller W compared to films on Si. We conclude that the different responses of W to stress are related to the different constrain states in films with different orientations.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL