Low temperature grown GaNAsSb: A promising ...
Document type :
Article dans une revue scientifique
DOI :
Title :
Low temperature grown GaNAsSb: A promising material for photoconductive switch application
Author(s) :
Tan, Kian Hua [Auteur]
School of Electrical and Electronic Engineering [EEE]
Yoon, Sonn Fatt [Auteur]
School of Electrical and Electronic Engineering [EEE]
Wicaksono, Satrio [Auteur]
School of Electrical and Electronic Engineering [EEE]
Loke, Wan Khai [Auteur]
School of Electrical and Electronic Engineering [EEE]
Li, D. S. [Auteur]
School of Electrical and Electronic Engineering [EEE]
Saadsaoud, Naïma [Auteur]
Laboratoire d'Electronique et Electromagnétisme [L2E]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Tripon-Canseliet, Charlotte [Auteur]
Laboratoire d'Electronique et Electromagnétisme [L2E]
Lampin, Jean-Francois [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chazelas, Jean [Auteur]
THALES Airborne Systems [Elancourt]
School of Electrical and Electronic Engineering [EEE]
Yoon, Sonn Fatt [Auteur]
School of Electrical and Electronic Engineering [EEE]
Wicaksono, Satrio [Auteur]
School of Electrical and Electronic Engineering [EEE]
Loke, Wan Khai [Auteur]
School of Electrical and Electronic Engineering [EEE]
Li, D. S. [Auteur]
School of Electrical and Electronic Engineering [EEE]
Saadsaoud, Naïma [Auteur]
Laboratoire d'Electronique et Electromagnétisme [L2E]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Tripon-Canseliet, Charlotte [Auteur]
Laboratoire d'Electronique et Electromagnétisme [L2E]
Lampin, Jean-Francois [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chazelas, Jean [Auteur]
THALES Airborne Systems [Elancourt]
Journal title :
Applied Physics Letters
Pages :
111113
Publisher :
American Institute of Physics
Publication date :
2013-09-13
ISSN :
0003-6951
English keyword(s) :
molecular beam epitaxial growth
semiconductor epitaxial layers
semiconductor growth
carrier lifetime
dark conductivity
wide band gap semiconductors
III-V semiconductors
gallium compounds
gallium arsenide
electrical resistivity
photoconducting switches
semiconductor epitaxial layers
semiconductor growth
carrier lifetime
dark conductivity
wide band gap semiconductors
III-V semiconductors
gallium compounds
gallium arsenide
electrical resistivity
photoconducting switches
HAL domain(s) :
Sciences de l'ingénieur [physics]/Electromagnétisme
English abstract : [en]
We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen ...
Show more >We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 107 Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.Show less >
Show more >We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 107 Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
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