Title :

Low temperature grown GaNAsSb: A promising material for photoconductive switch application

Author(s) :

Tan, Kian Hua [Auteur]
School of Electrical and Electronic Engineering [EEE]
Yoon, Sonn Fatt [Auteur]
School of Electrical and Electronic Engineering [EEE]
Wicaksono, Satrio [Auteur]
School of Electrical and Electronic Engineering [EEE]
Loke, Wan Khai [Auteur]
School of Electrical and Electronic Engineering [EEE]
Li, D. S. [Auteur]
School of Electrical and Electronic Engineering [EEE]
Saadsaoud, Naïma [Auteur]
Laboratoire d'Electronique et Electromagnétisme [L2E]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Tripon-Canseliet, Charlotte [Auteur]
Laboratoire d'Electronique et Electromagnétisme [L2E]
Lampin, Jean-Francois [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chazelas, Jean [Auteur]
THALES Airborne Systems [Elancourt]

Journal title :

Applied Physics Letters

Pages :

111113

Publisher :

American Institute of Physics

Publication date :

2013-09-13

ISSN :

0003-6951

English keyword(s) :

molecular beam epitaxial growth
semiconductor epitaxial layers
semiconductor growth
carrier lifetime
dark conductivity
wide band gap semiconductors
III-V semiconductors
gallium compounds
gallium arsenide
electrical resistivity
photoconducting switches

HAL domain(s) :

Sciences de l'ingénieur [physics]/Electromagnétisme

English abstract : [en]

We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen ...
Show more >We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 107 Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL