Preparation of silicon-based nanowires and the thermochemistry of the process

Hourlier, D.; Lefebvre, P.; Perrot, P.

Type de document :

Communication dans un congrès avec actes

DOI :

10.1051/jeep/200900002

Titre :

Preparation of silicon-based nanowires and the thermochemistry of the process

Auteur(s) :

Hourlier, D. [Auteur]
Lefebvre, P. [Auteur]
Perrot, P. [Auteur]

Titre de la manifestation scientifique :

35èmes Journées d'Etudes des Equilibres entre Phases, JEEP XXXV

Ville :

Annecy

Pays :

France

Date de début de la manifestation scientifique :

2009

Titre de l’ouvrage :

JEEP 2009

Date de publication :

2009

Mot(s)-clé(s) en anglais :

Silicon nanowires
VLS mechanism
thermodynamics
phase diagrams
nanosystems

Discipline(s) HAL :

Physique [physics]

Résumé en anglais : [en]

The present paper is part of a general investigation of the thermodynamic properties of metal-semiconductor systems involved in the nanowires growth. Here, we will show that many aspects of the growth mechanisms, such as ...
Lire la suite >The present paper is part of a general investigation of the thermodynamic properties of metal-semiconductor systems involved in the nanowires growth. Here, we will show that many aspects of the growth mechanisms, such as the surface curvature of the solid phase (in the nano or micrometer range), in equilibrium with the liquid phase are extremely important. We calculate and construct all binary Au-Si phase diagrams corresponding to nanosystems. By choosing the S(V)LS process rather than the VLS process, wesucceeded in answering not only the origin of the driving force needed to trigger off the precipitation of solid nanowire but also the thorny question of the size limit of nanowires in relation with our specific growth conditionsLire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Non spécifiée

Vulgarisation :

Non

Collections :