Title :

Guided-wave electro-optic characterization of BaTiO3 thin films using the prism coupling technique

Author(s) :

Leroy, Floriane [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rousseau, Anthony [Auteur]
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Payan, Sandrine [Auteur]
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Dogheche, El Hadj [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Jenkins, David [Auteur]
School of Computing, Electronics and Mathematics [Plymouth]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Maglione, Mario [Auteur]
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

Journal title :

Optics Letters

Pages :

1037-1039

Publisher :

Optical Society of America - OSA Publishing

Publication date :

2013

ISSN :

0146-9592

English keyword(s) :

Electro-optical materials
Guided waves
Thin films

HAL domain(s) :

Chimie/Matériaux

English abstract : [en]

Ferroelectric BaTiO3 (BTO) thin films are grown by RF sputtering onto an indium tin oxide bottom electrode on a MgO single-crystal substrate. We have studied here the optical properties by the prism coupling technique. We ...
Show more >Ferroelectric BaTiO3 (BTO) thin films are grown by RF sputtering onto an indium tin oxide bottom electrode on a MgO single-crystal substrate. We have studied here the optical properties by the prism coupling technique. We report the ordinary and extraordinary refractive indices of the films, the film thickness, and the optical losses that are obtained on the planar waveguides: n0=2.224±0.001 and ne=2.219±0.001 at 1539 nm. Furthermore, in order to demonstrate the active property of the BTO films, we have investigated the electro-optic (EO) properties by using the change of the resonant coupling angle (variation of fundamental TE0 guided mode) when the transverse electric field is applied. The latter is induced by the refractive index variation (Δn) caused by the EO effect when a static electric field is applied transversely to the film. The EO coefficient obtain is about 18 pm/V for TE mode and 23 pm/V for TM modes at 1539 nm. This value illustrates the suitability of the BTO material thin film with a polycrystalline structure for applications such as modulations, switching, and interconnections.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL