Artificial duplication of polarization fatigue in Pb(Zr0.54Ti0.46)O3 thin film capacitors

Bouregba, Rachid; Sama, Nossikpendou; Soyer, Caroline; Poullain, Gilles; Remiens, Denis

Document type :

Article dans une revue scientifique

DOI :

10.1016/j.tsf.2012.11.098

Title :

Artificial duplication of polarization fatigue in Pb(Zr0.54Ti0.46)O3 thin film capacitors

Author(s) :

Bouregba, Rachid [Auteur]
Laboratoire de cristallographie et sciences des matériaux [CRISMAT]
Sama, Nossikpendou [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Soyer, Caroline [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Poullain, Gilles [Auteur]
Laboratoire de cristallographie et sciences des matériaux [CRISMAT]
Remiens, Denis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Thin Solid Films

Pages :

327-333

Publisher :

Elsevier

Publication date :

2013

ISSN :

0040-6090

English keyword(s) :

Ferroelectrics
Lead zirconate titanate
Thin films
Polarization
Fatigue
Modeling
Interface defects

HAL domain(s) :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]

English abstract : [en]

Polarization fatigue in ferroelectric perovskite oxides is a commonly known phenomenon. However no model has promoted consensual interpretation regarding its nature. In this article, the polarization loop of a Pb(Zr0.54Ti0.46)O3 ...
Show more >Polarization fatigue in ferroelectric perovskite oxides is a commonly known phenomenon. However no model has promoted consensual interpretation regarding its nature. In this article, the polarization loop of a Pb(Zr0.54Ti0.46)O3 thin film capacitor measured at a given moment of the fatigue process is entirely duplicated after bringing in series with a fresh sample an electrical circuit calibrated in a way to model the aging mechanism. The latter was analyzed by considering time dependent interface properties but invariant bulk values. Unequivocal demonstration is made that fatigue polarization in the studied sample resulted from decline of the electric properties of the interfaces, leading to a decrease in the electric field actually applied to the switching domains. Injection of charge at interface defects, caused by polarization reversal, was probably the vector of these degradations.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :