Low-noise microwave performance of AlN/GaN ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate
Auteur(s) :
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Waldhoff, Nicolas [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Grimbert, B. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rolland, Nathalie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rolland, Paul-Alain [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Waldhoff, Nicolas [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zegaoui, Malek [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Grimbert, B. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rolland, Nathalie [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rolland, Paul-Alain [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
IEEE Electron Device Letters
Pagination :
1230-1232
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
2011
ISSN :
0741-3106
Mot(s)-clé(s) en anglais :
AlN/GaN high-electron-mobility transistors (HEMTs)
high output current density
high transconductance
noise figure
Si substrate
high output current density
high transconductance
noise figure
Si substrate
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure ...
Lire la suite >Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-wave (mmW) applications. A maximum output current density of about 2 A/mm, together with a low gate leakage current, and a record GaN-on-Si extrinsic transconductance above 600 mS/mm are demonstrated. The current gain cutoff frequency fT and the maximum oscillation frequency fmax were 85 and 103 GHz, respectively, with a 0.16-μm gate length. At VDS = 4 V, the device exhibits a minimum noise figure (NFmin) of 1 dB (1.8 dB) with an associated gain (GA) of 12 dB (10 dB) at 10 GHz (18 GHz) favorably comparable to the best reported GaN-on-Si HEMTs. These results show that AlN/GaN HEMTs grown on silicon substrate are promising for the integration of cost effective, low noise, and high power mmW amplifiers.Lire moins >
Lire la suite >Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-wave (mmW) applications. A maximum output current density of about 2 A/mm, together with a low gate leakage current, and a record GaN-on-Si extrinsic transconductance above 600 mS/mm are demonstrated. The current gain cutoff frequency fT and the maximum oscillation frequency fmax were 85 and 103 GHz, respectively, with a 0.16-μm gate length. At VDS = 4 V, the device exhibits a minimum noise figure (NFmin) of 1 dB (1.8 dB) with an associated gain (GA) of 12 dB (10 dB) at 10 GHz (18 GHz) favorably comparable to the best reported GaN-on-Si HEMTs. These results show that AlN/GaN HEMTs grown on silicon substrate are promising for the integration of cost effective, low noise, and high power mmW amplifiers.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :