Thermal characterization of MBE-grown ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond
Author(s) :
Kuzmik, J. [Auteur]
Vienna University of Technology = Technische Universität Wien [TU Wien]
Bychikhin, S. [Auteur]
Vienna University of Technology = Technische Universität Wien [TU Wien]
Pogany, D. [Auteur]
Vienna University of Technology = Technische Universität Wien [TU Wien]
Pichonat, Emmanuelle [Auteur]
Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 [LASIRE]
Lancry, O. [Auteur]
Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 [LASIRE]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Tsiakatouras, G. [Auteur]
University of Crete [Heraklion] [UOC]
Deligeorgis, G. [Auteur]
University of Crete [Heraklion] [UOC]
Georgakilas, A. [Auteur]
University of Crete [Heraklion] [UOC]
Vienna University of Technology = Technische Universität Wien [TU Wien]
Bychikhin, S. [Auteur]
Vienna University of Technology = Technische Universität Wien [TU Wien]
Pogany, D. [Auteur]
Vienna University of Technology = Technische Universität Wien [TU Wien]
Pichonat, Emmanuelle [Auteur]

Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 [LASIRE]
Lancry, O. [Auteur]
Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 [LASIRE]
Gaquiere, Christophe [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Tsiakatouras, G. [Auteur]
University of Crete [Heraklion] [UOC]
Deligeorgis, G. [Auteur]
University of Crete [Heraklion] [UOC]
Georgakilas, A. [Auteur]
University of Crete [Heraklion] [UOC]
Journal title :
Journal of Applied Physics
Pages :
086106
Publisher :
American Institute of Physics
Publication date :
2011
ISSN :
0021-8979
HAL domain(s) :
Sciences de l'ingénieur [physics]/Electronique
English abstract : [en]
Self-heating effects in a molecular beam epitaxy-grown GaN/AlGaN/GaN structure on a single crystalline diamond is investigated. A transient interferometric method, in combination with a three dimensional model, is used to ...
Show more >Self-heating effects in a molecular beam epitaxy-grown GaN/AlGaN/GaN structure on a single crystalline diamond is investigated. A transient interferometric method, in combination with a three dimensional model, is used to describe a pulsed operation of a transistor-like heater, and a micro-Raman technique is used in a steady state. Good agreement is found between the techniques. The thermal conductivity of the diamond is found to be 2200 W/m K, and the thermal boundary resistance to the III-N epi-structure is < 1 × 10−8 m2 K/W. The excellent cooling efficiency of the diamond is manifested by the fast saturation of the temperature at 1 μs and by a record low normalized thermal resistance of 3.5 K mm/W.Show less >
Show more >Self-heating effects in a molecular beam epitaxy-grown GaN/AlGaN/GaN structure on a single crystalline diamond is investigated. A transient interferometric method, in combination with a three dimensional model, is used to describe a pulsed operation of a transistor-like heater, and a micro-Raman technique is used in a steady state. Good agreement is found between the techniques. The thermal conductivity of the diamond is found to be 2200 W/m K, and the thermal boundary resistance to the III-N epi-structure is < 1 × 10−8 m2 K/W. The excellent cooling efficiency of the diamond is manifested by the fast saturation of the temperature at 1 μs and by a record low normalized thermal resistance of 3.5 K mm/W.Show less >
Language :
Anglais
Popular science :
Non
Source :
Files
- https://hal.archives-ouvertes.fr/hal-00591315/document
- Open access
- Access the document
- https://hal.archives-ouvertes.fr/hal-00591315/document
- Open access
- Access the document
- document
- Open access
- Access the document
- Kuzmik_2011_1.3581032.pdf
- Open access
- Access the document