Title :

Anisotropic excitonic effects in the energy loss function of hexagonal boron nitride

Author(s) :

Galambosi, S. [Auteur]
Helsingin yliopisto = Helsingfors universitet = University of Helsinki
Wirtz, L. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Soininen, J.A. [Auteur]
Helsingin yliopisto = Helsingfors universitet = University of Helsinki
Serrano, J. [Auteur]
Institució Catalana de Recerca i Estudis Avançats [ICREA]
Marini, A. [Auteur]
Centro de Fisica de Materiales [CFM]
Universidad del Pais Vasco / Euskal Herriko Unibertsitatea [Espagne] [UPV/EHU]
Dipartimento di Fisica [Roma Tor Vergata]
Ikerbasque - Basque Foundation for Science
Watanabe, K. [Auteur]
National Institute for Materials Science [NIMS]
Taniguchi, T. [Auteur]
National Institute for Materials Science [NIMS]
Huotari, S. [Auteur]
Helsingin yliopisto = Helsingfors universitet = University of Helsinki
European Synchroton Radiation Facility [Grenoble] [ESRF]
Rubio, A. [Auteur]
Centro de Fisica de Materiales [CFM]
Hamalainen, K. [Auteur]
Helsingin yliopisto = Helsingfors universitet = University of Helsinki

Journal title :

Physical Review B: Condensed Matter and Materials Physics (1998-2015)

Pages :

081413

Publisher :

American Physical Society

Publication date :

2011

ISSN :

1098-0121

HAL domain(s) :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]

English abstract : [en]

The anisotropy of the valence energy-loss function of hexagonal boron nitride (hBN) is shown to be largely enhanced by the highly inhomogeneous character of the excitonic states. The energy loss with momentum transfer ...
Show more >The anisotropy of the valence energy-loss function of hexagonal boron nitride (hBN) is shown to be largely enhanced by the highly inhomogeneous character of the excitonic states. The energy loss with momentum transfer parallel to the BN layers is dominated by strongly bound, quasi-two-dimensional excitons. In contrast, excitations with momentum transfer perpendicular to the layers are influenced by weakly bound three-dimensional excitons. This striking phenomenon is revealed by a combined study using high-precision nonresonant inelastic x-ray scattering measurements supported by ab initio calculations. The results are relevant in general to layered insulating systems.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

ANR Project :

/

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL