Design, fabrication and physical analysis ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes
Author(s) :
Barkad, Hassan Ali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Soltani, Ali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mattalah, Maghnia [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gerbedoen, J-C [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rousseau, Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
De Jaeger, Jean-Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Benmoussa, Ali [Auteur]
Royal Observatory of Belgium = Observatoire Royal de Belgique [ROB]
Mortet, Vincent [Auteur]
Institute for Materials Research [Diepenbeek]
Haenen, Ken [Auteur]
Institute for Materials Research [Diepenbeek]
Benbakhti, Brahim [Auteur]
Department of Electrical and Electronic Engineering [London] [DEEE]
Moreau, Myriam [Auteur]
Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 [LASIRE]
Dupuis, Russell [Auteur]
Georgia Institute of Technology [Atlanta]
Ougazzaden, Abdallah [Auteur]
Georgia Tech Lorraine [Metz]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Soltani, Ali [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mattalah, Maghnia [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gerbedoen, J-C [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rousseau, Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
De Jaeger, Jean-Claude [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Benmoussa, Ali [Auteur]
Royal Observatory of Belgium = Observatoire Royal de Belgique [ROB]
Mortet, Vincent [Auteur]
Institute for Materials Research [Diepenbeek]
Haenen, Ken [Auteur]
Institute for Materials Research [Diepenbeek]
Benbakhti, Brahim [Auteur]
Department of Electrical and Electronic Engineering [London] [DEEE]
Moreau, Myriam [Auteur]
Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 [LASIRE]
Dupuis, Russell [Auteur]
Georgia Institute of Technology [Atlanta]
Ougazzaden, Abdallah [Auteur]
Georgia Tech Lorraine [Metz]
Journal title :
Journal of Physics D: Applied Physics
Pages :
465104
Publisher :
IOP Publishing
Publication date :
2010-11-24
ISSN :
0022-3727
Keyword(s) :
Simulation
Photodiodes
AlN
deep UV
Simulation.
Photodiodes
AlN
deep UV
Simulation.
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
Deep-ultraviolet solar-blind photodiodes based on high-quality AlN films grown on sapphire substrates with a metal-semiconductor-metal configuration were simulated and fabricated. The Schottky contact is based on TiN ...
Show more >Deep-ultraviolet solar-blind photodiodes based on high-quality AlN films grown on sapphire substrates with a metal-semiconductor-metal configuration were simulated and fabricated. The Schottky contact is based on TiN metallisation. The material is characterised by micro-Raman spectroscopy and X-ray diffraction technique. The detector presents extremely low dark current of 100fA at -100V DC bias for a device area of 3.1 mm 2. It also exhibits a rejection ratio between 180nm and 300nm of three orders of magnitude with a very sharp cut-off wavelength at 203nm (∼6.1eV). The simulation, based on a 2D energy-balance model using COMSOL® software, permits to help the designer for the optimum topology determination by means of physical studies. The measurement results are in good agreement with the model predictions.Show less >
Show more >Deep-ultraviolet solar-blind photodiodes based on high-quality AlN films grown on sapphire substrates with a metal-semiconductor-metal configuration were simulated and fabricated. The Schottky contact is based on TiN metallisation. The material is characterised by micro-Raman spectroscopy and X-ray diffraction technique. The detector presents extremely low dark current of 100fA at -100V DC bias for a device area of 3.1 mm 2. It also exhibits a rejection ratio between 180nm and 300nm of three orders of magnitude with a very sharp cut-off wavelength at 203nm (∼6.1eV). The simulation, based on a 2D energy-balance model using COMSOL® software, permits to help the designer for the optimum topology determination by means of physical studies. The measurement results are in good agreement with the model predictions.Show less >
Language :
Anglais
Popular science :
Non
Source :
Files
- https://hal.archives-ouvertes.fr/hal-00569746/document
- Open access
- Access the document
- https://hal.archives-ouvertes.fr/hal-00569746/document
- Open access
- Access the document
- https://hal.archives-ouvertes.fr/hal-00569746/document
- Open access
- Access the document
- document
- Open access
- Access the document
- PEER_stage2_10.1088%252F0022-3727%252F43%252F46%252F465104.pdf
- Open access
- Access the document
- PEER_stage2_10.1088%252F0022-3727%252F43%252F46%252F465104.pdf
- Open access
- Access the document
- fulltext.pdf
- Open access
- Access the document