Titre :

Low-temperature scanning tunneling microscopy study of self-assembled InAs quantum dots grown by droplet epitaxy

Auteur(s) :

Durand, Corentin [Auteur]
Peilloux, A. [Auteur]
Suzuki, K. [Auteur]
Kanisawa, K. [Auteur]
Grandidier, B. [Auteur]
Muraki, K. [Auteur]

Titre de la revue :

Physics Procedia
Proceedings of the 14th International conference on Narrow Gap Semiconductors and Systems

Pagination :

1299-1304

Éditeur :

Elsevier

Date de publication :

2010

ISSN :

1875-3892

Mot(s)-clé(s) en anglais :

Quantum dots
Droplet epitaxy
Scanning tunneling microscopy
Molecular beam epitaxy
Self-assembled structure
Local density of states
Strained-growth

Discipline(s) HAL :

Physique [physics]/Matière Condensée [cond-mat]

Résumé en anglais : [en]

Using molecular beam epitaxy, we study self-assembled InAs quantum dots (QDs) grown on GaAs (001) substrates by lowtemperature scanning tunneling microscopy. We compare two different growth processes, the well-known ...
Lire la suite >Using molecular beam epitaxy, we study self-assembled InAs quantum dots (QDs) grown on GaAs (001) substrates by lowtemperature scanning tunneling microscopy. We compare two different growth processes, the well-known Stranski-Krastanow mode and the more recently studied droplet epitaxy mode. We show that, for the same amount of deposited indium, the shape of the dots shows similar anisotropic tendency, but the InAs coverage dependence of the density shows that the growth mechanisms are different at the initial stage of the QD formation. By scanning tunneling spectroscopy at low temperature, we succeed in mapping the local density of states (LDOS) of a single quantum dot grown by the droplet epitaxy. Maps of LDOS are consistent with those previously reported for the Stranski–Krastanow mode; however, energy spectrum of our QDs shows different peak structuresLire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Non spécifiée

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL