Low-temperature scanning tunneling microscopy ...
Document type :
Article dans une revue scientifique
Title :
Low-temperature scanning tunneling microscopy study of self-assembled InAs quantum dots grown by droplet epitaxy
Author(s) :
Durand, Corentin [Auteur]
Peilloux, A. [Auteur]
Suzuki, K. [Auteur]
Kanisawa, K. [Auteur]
Grandidier, B. [Auteur]
Muraki, K. [Auteur]
Peilloux, A. [Auteur]
Suzuki, K. [Auteur]
Kanisawa, K. [Auteur]
Grandidier, B. [Auteur]
Muraki, K. [Auteur]
Journal title :
Physics Procedia
Proceedings of the 14th International conference on Narrow Gap Semiconductors and Systems
Proceedings of the 14th International conference on Narrow Gap Semiconductors and Systems
Pages :
1299-1304
Publisher :
Elsevier
Publication date :
2010
ISSN :
1875-3892
English keyword(s) :
Quantum dots
Droplet epitaxy
Scanning tunneling microscopy
Molecular beam epitaxy
Self-assembled structure
Local density of states
Strained-growth
Droplet epitaxy
Scanning tunneling microscopy
Molecular beam epitaxy
Self-assembled structure
Local density of states
Strained-growth
HAL domain(s) :
Physique [physics]/Matière Condensée [cond-mat]
English abstract : [en]
Using molecular beam epitaxy, we study self-assembled InAs quantum dots (QDs) grown on GaAs (001) substrates by lowtemperature scanning tunneling microscopy. We compare two different growth processes, the well-known ...
Show more >Using molecular beam epitaxy, we study self-assembled InAs quantum dots (QDs) grown on GaAs (001) substrates by lowtemperature scanning tunneling microscopy. We compare two different growth processes, the well-known Stranski-Krastanow mode and the more recently studied droplet epitaxy mode. We show that, for the same amount of deposited indium, the shape of the dots shows similar anisotropic tendency, but the InAs coverage dependence of the density shows that the growth mechanisms are different at the initial stage of the QD formation. By scanning tunneling spectroscopy at low temperature, we succeed in mapping the local density of states (LDOS) of a single quantum dot grown by the droplet epitaxy. Maps of LDOS are consistent with those previously reported for the Stranski–Krastanow mode; however, energy spectrum of our QDs shows different peak structuresShow less >
Show more >Using molecular beam epitaxy, we study self-assembled InAs quantum dots (QDs) grown on GaAs (001) substrates by lowtemperature scanning tunneling microscopy. We compare two different growth processes, the well-known Stranski-Krastanow mode and the more recently studied droplet epitaxy mode. We show that, for the same amount of deposited indium, the shape of the dots shows similar anisotropic tendency, but the InAs coverage dependence of the density shows that the growth mechanisms are different at the initial stage of the QD formation. By scanning tunneling spectroscopy at low temperature, we succeed in mapping the local density of states (LDOS) of a single quantum dot grown by the droplet epitaxy. Maps of LDOS are consistent with those previously reported for the Stranski–Krastanow mode; however, energy spectrum of our QDs shows different peak structuresShow less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Source :
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