Graphene growth by molecular beam epitaxy ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Graphene growth by molecular beam epitaxy using a solid carbon source
Auteur(s) :
Moreau, E. [Auteur]
Ferrer, F.J. [Auteur]
Vignaud, Dominique [Auteur]
Godey, Sylvie [Auteur]
Wallart, Xavier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ferrer, F.J. [Auteur]
Vignaud, Dominique [Auteur]
Godey, Sylvie [Auteur]
Wallart, Xavier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
physica status solidi (a)
Pagination :
300-303
Éditeur :
Wiley
Date de publication :
2010
ISSN :
0031-8965
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
The direct elaboration of graphene by molecular beam epitaxy (MBE) has been studied, using a solid carbon source. Successful growth has been achieved on both the carbon and silicon terminated faces of silicon carbide ...
Lire la suite >The direct elaboration of graphene by molecular beam epitaxy (MBE) has been studied, using a solid carbon source. Successful growth has been achieved on both the carbon and silicon terminated faces of silicon carbide substrates in the temperature range 1000-1100 °C, as confirmed by low energy electron diffraction (LEED) and X-ray photoemission spectroscopy (XPS) analysis. Atomic force microscopy (AFM) observations show that the initial substrate structure, i.e. flat atomic terraces and half-period high steps, remains almost unaffected during the growth, contrary to what is observed following the graphitization process.Lire moins >
Lire la suite >The direct elaboration of graphene by molecular beam epitaxy (MBE) has been studied, using a solid carbon source. Successful growth has been achieved on both the carbon and silicon terminated faces of silicon carbide substrates in the temperature range 1000-1100 °C, as confirmed by low energy electron diffraction (LEED) and X-ray photoemission spectroscopy (XPS) analysis. Atomic force microscopy (AFM) observations show that the initial substrate structure, i.e. flat atomic terraces and half-period high steps, remains almost unaffected during the growth, contrary to what is observed following the graphitization process.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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