Doped graphene as tunable electron-phonon ...
Document type :
Article dans une revue scientifique
DOI :
Title :
Doped graphene as tunable electron-phonon coupling material
Author(s) :
Attaccalite, Claudio [Auteur]
Wirtz, L. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lazzeri, M. [Auteur]
Mauri, Francesco [Auteur]
Rubio, A. [Auteur]
Wirtz, L. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lazzeri, M. [Auteur]
Mauri, Francesco [Auteur]
Rubio, A. [Auteur]
Journal title :
Nano Letters
Pages :
1172-1176
Publisher :
American Chemical Society
Publication date :
2010
ISSN :
1530-6984
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
We present a new way to tune the electron-phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K, acquires ...
Show more >We present a new way to tune the electron-phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K, acquires a strong dependency on the doping level due to electronelectron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multi-layer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through the external control of the EPCShow less >
Show more >We present a new way to tune the electron-phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K, acquires a strong dependency on the doping level due to electronelectron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multi-layer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through the external control of the EPCShow less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Source :
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