Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer

Plissard, S.R.; Coinon, Christophe; Androussi, Ydir; Wallart, X.

Document type :

Article dans une revue scientifique

DOI :

10.1063/1.3275872

Title :

Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer

Author(s) :

Plissard, S.R. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Coinon, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Androussi, Ydir [Auteur]
Laboratoire de structures et propriétés de l'état solide - UMR 8008 [LSPES]
Wallart, X. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Journal of Applied Physics

Pages :

0161021

Publisher :

American Institute of Physics

Publication date :

2010

ISSN :

0021-8979

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

The strain relaxation in low mismatched InxAl1−xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has ...
Show more >The strain relaxation in low mismatched InxAl1−xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has been grown by adapting the composition and thickness of a first “strained layer.” The threading dislocation density in the top layer is below 106 /cm2 and strain is relaxed atthe substrate/first layer interface by misfit dislocations. This scheme is a promising method to limit the thickness of buffer layers and obtain fully relaxed pseudosubstratesShow less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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