Title :

Correlation-induced conductance suppression at level degeneracy in a quantum dot

Author(s) :

Nilsson, H.A. [Auteur]
Skane University Hospital [Lund]
Karlström, O. [Auteur]
Skane University Hospital [Lund]
Larsson, M. [Auteur]
Skane University Hospital [Lund]
Caroff, P. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Skane University Hospital [Lund]
Pedersen, J.N. [Auteur]
Skane University Hospital [Lund]
Samuelson, L. [Auteur]
Skane University Hospital [Lund]
Wacker, A. [Auteur]
Skane University Hospital [Lund]
Wernersson, L.E. [Auteur]
Skane University Hospital [Lund]
Xu, H.Q. [Auteur]
Skane University Hospital [Lund]

Journal title :

Physical Review Letters

Pages :

186804

Publisher :

American Physical Society

Publication date :

2010

ISSN :

0031-9007

HAL domain(s) :

Physique [physics]/Matière Condensée [cond-mat]
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

The large, level-dependent g-factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the standard conductance enhancement in the Coulomb blockade region ...
Show more >The large, level-dependent g-factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the standard conductance enhancement in the Coulomb blockade region for aligned levels with different spins due to the Kondo effect, a vanishing of the conductance is found at the alignment of levels with equal spins. This conductancesuppression appears as a canyon cutting through the web of direct tunneling lines and an enclosed Coulomb blockade region. In the center of the Coulomb blockade region, we observe the predicted correlation-induced resonance, which now turns out to be part of a larger scenario. Our findings are supported by numerical and analytical calculations.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL