Titre :

Correlation-induced conductance suppression at level degeneracy in a quantum dot

Auteur(s) :

Nilsson, H.A. [Auteur]
Skane University Hospital [Lund]
Karlström, O. [Auteur]
Skane University Hospital [Lund]
Larsson, M. [Auteur]
Skane University Hospital [Lund]
Caroff, P. [Auteur]
Skane University Hospital [Lund]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pedersen, J.N. [Auteur]
Skane University Hospital [Lund]
Samuelson, L. [Auteur]
Skane University Hospital [Lund]
Wacker, A. [Auteur]
Skane University Hospital [Lund]
Wernersson, L.E. [Auteur]
Skane University Hospital [Lund]
Xu, H.Q. [Auteur]
Skane University Hospital [Lund]

Titre de la revue :

Physical Review Letters

Pagination :

186804

Éditeur :

American Physical Society

Date de publication :

2010

ISSN :

0031-9007

Discipline(s) HAL :

Physique [physics]/Matière Condensée [cond-mat]
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

Résumé en anglais : [en]

The large, level-dependent g-factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the standard conductance enhancement in the Coulomb blockade region ...
Lire la suite >The large, level-dependent g-factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the standard conductance enhancement in the Coulomb blockade region for aligned levels with different spins due to the Kondo effect, a vanishing of the conductance is found at the alignment of levels with equal spins. This conductancesuppression appears as a canyon cutting through the web of direct tunneling lines and an enclosed Coulomb blockade region. In the center of the Coulomb blockade region, we observe the predicted correlation-induced resonance, which now turns out to be part of a larger scenario. Our findings are supported by numerical and analytical calculations.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL