Title :

Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs

Author(s) :

El Fatimy, A. [Auteur]
Groupe d'étude des semiconducteurs [GES]
Suemitsu, T. [Auteur]
Otsuji, T. [Auteur]
Dyakonova, N. [Auteur]
Groupe d'étude des semiconducteurs [GES]
Knap, W. [Auteur]
Groupe d'étude des semiconducteurs [GES]
Meziani, Y. M. [Auteur]
Vandenbrouk, S. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Madjour, K. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Théron, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Prystawko, P. [Auteur]
Skierbiszewski, C. [Auteur]

Conference title :

16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16)

Country :

France

Start date of the conference :

2009-08-24

Book title :

Journal of Physics Conference Series

Publication date :

2009-11

HAL domain(s) :

Physique [physics]/Physique [physics]/Physique Générale [physics.gen-ph]

English abstract : [en]

In this work, we report on room temperature terahertz radiation from sub-micron size GaN/AlGaN based high electron mobility transistors (HEMTs). They could successfully replace the standard Fourier Transform spectrometer ...
Show more >In this work, we report on room temperature terahertz radiation from sub-micron size GaN/AlGaN based high electron mobility transistors (HEMTs). They could successfully replace the standard Fourier Transform spectrometer source and were investigated with a standard Si-bolometer as a detector. The relatively broad (~1THz) emission line was observed. The maxima were found to be tunable by the gate voltage between 0.75 and 2.1 THz. The observed emission was interpreted as due to the current driven plasma waves instability in the two-dimensional electron gas. The emitted power from a single device reached 150 nW, showing possible application of these transistors as compact sources for terahertz spectroscopy and imaging.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL