Title :

Low sensitivity to temperature compressive-strained structure quantum well laser Ga1-xInxAs1-yNy/GaAs

Author(s) :

Aissat, Abdelkader [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nacer, Said [Auteur]
Bensebti, Messaoud [Auteur]
Vilcot, Jean-Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Microelectronics Journal

Pages :

10-14

Publisher :

Elsevier

Publication date :

2009

ISSN :

0026-2692

English keyword(s) :

Semiconductor
Optoelectronics
Laser diode
Strained quantum wells—GaxIn1−x
NyAs1−y/GaAs
GaInNAsSb/GaAs

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

The objective is to exploit the properties of the GaInNAs/GaAs alloy compressive strain structure to design a laser diode likely to meet the needs of optical communications. Modelling concerns mainly the study of the ...
Show more >The objective is to exploit the properties of the GaInNAs/GaAs alloy compressive strain structure to design a laser diode likely to meet the needs of optical communications. Modelling concerns mainly the study of the potentialities of thermal stability and dynamic response offered by these new techniques of electric and optical confinement. Band structure is modelled and typical quantum well properties are illustrated. A thorough study of the structural parameters is undertaken to take into account from the design criteria the temperature sensitivity. Minimising the Auger coefficient in the order of 10−29 cm6/s appears to allow achieving efficient laser diodes production.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL