Title :

A new low crosstalk InP digital optical switch based on carrier-induced effects for 1.55-µm applications

Author(s) :

Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Harari, Joseph [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Magnin, Vincent [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wallart, X. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chazelas, Jean [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

IEEE Photonics Technology Letters

Pages :

546-548

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2009

ISSN :

1041-1135

English keyword(s) :

Adiabatic transitions
Carrier-induced effects
Crosstalk
Digital optical switch (DOS)
InP-InGaAsP-InP waveguides

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

This letter demonstrates an original carrier-induced effects InP digital optical switch (DOS) designed to achieve a low optical crosstalk for 1.55-μm wavelength applications. It is based on a widened multimode Y-junction ...
Show more >This letter demonstrates an original carrier-induced effects InP digital optical switch (DOS) designed to achieve a low optical crosstalk for 1.55-μm wavelength applications. It is based on a widened multimode Y-junction combined with a sinusoidal shape waveguide to increase the optical contrast ratio between the two output branches. The entire InP-InGaAsP-InP DOS was designed using a semi-vectorial three-dimensional beam propagation method. The fabricated InP DOS with λg = 1.3 μm heterostructure exhibits an optical crosstalk as low as -38.5 dB for a 33-mA switching current at 1.55-μm wavelength for a favourable polarized input light.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL