Title :

Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

Author(s) :

Larrieu, G. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Yarekha, Dmytro [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Deresmes, D. [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Breil, N. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Reckinger, N. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Tang, Xing [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Halimaoui, A. [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]

Journal title :

ECS Transactions

Pages :

201-207

Publisher :

Electrochemical Society, Inc.

Publication date :

2009

ISSN :

1938-5862

HAL domain(s) :

Sciences de l'ingénieur [physics]/Electronique

English abstract : [en]

The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substrate with a particular attention to erbium and ytterbium silicides. Due to the limited Si source, defects generation on SOI ...
Show more >The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substrate with a particular attention to erbium and ytterbium silicides. Due to the limited Si source, defects generation on SOI is prevented compared to bulk substrate. Reaction of RE with dielectric materials limits the temperature of silicidation. It is shown that RE S/D MOSFETs are still limited in current-drive by the Schottky barrier heightShow less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL