Electronic and transport properties of ...
Document type :
Communication dans un congrès avec actes
Title :
Electronic and transport properties of semiconductor nanowires : theory and simulation
Author(s) :
Niquet, Yann-Michel [Auteur]
Lherbier, Aurélien [Auteur]
Persson, Martin P. [Auteur]
Triozon, François [Auteur]
Roche, Stéphane [Auteur]
Institut Nanosciences et Cryogénie [INAC]
Diarra, Mamadou [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lherbier, Aurélien [Auteur]
Persson, Martin P. [Auteur]
Triozon, François [Auteur]
Roche, Stéphane [Auteur]
Institut Nanosciences et Cryogénie [INAC]
Diarra, Mamadou [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Conference title :
International Conference on One-dimensional Nanomaterials
City :
Malmö/Lund
Country :
Suède
Start date of the conference :
2007
Book title :
_
Publication date :
2007
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
In this paper, we review and contrast some computational methodologies to investigate charge transport in low dimensional materials and devices. This includes ultra-scaled MOS devices as well as nanowires-based field effects ...
Show more >In this paper, we review and contrast some computational methodologies to investigate charge transport in low dimensional materials and devices. This includes ultra-scaled MOS devices as well as nanowires-based field effects transistors or carbon nanotubes-based emerging devices. After presenting the context of nanodevice simulation, the focus will be made on the limits for ballistic transport in these several types of nanodevices.Show less >
Show more >In this paper, we review and contrast some computational methodologies to investigate charge transport in low dimensional materials and devices. This includes ultra-scaled MOS devices as well as nanowires-based field effects transistors or carbon nanotubes-based emerging devices. After presenting the context of nanodevice simulation, the focus will be made on the limits for ballistic transport in these several types of nanodevices.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Source :