Nonquasi-static large-signal model of GaN ...

Document type :
Article dans une revue scientifique
DOI :
10.1002/mmce.20326
Title :
Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach
Author(s) :
Santarelli, Alberto [Auteur]
University of Bologna/Università di Bologna
Di Giacomo, Valeria [Auteur]
Università degli Studi di Ferrara = University of Ferrara [UniFE]
Raffo, Antonio [Auteur]
Università degli Studi di Ferrara = University of Ferrara [UniFE]
Filicori, Fabio [Auteur]
University of Bologna/Università di Bologna
Vannini, Giorgio [Auteur]
Università degli Studi di Ferrara = University of Ferrara [UniFE]
Aubry, Raphaël [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gaquière, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
International Journal of RF and Microwave Computer-Aided Engineering
Pages :
507-516
Publisher :
Wiley
Publication date :
2008
ISSN :
1096-4290
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
A new empirical nonlinear model of GaN-based electron devices is presented in the article. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate ...
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Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Collections :
Source :
Harvested from HAL
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