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Passive photonic components using InP ...
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Document type :
Article dans une revue scientifique
DOI :
10.1049/iet-opt:20060104
Title :
Passive photonic components using InP optical wire technology
Author(s) :
Lesecq, Marie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Maricot, Sophie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vilcot, Jean-Pierre [Auteur] refId
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Beaugeois, Maxime [Auteur]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Journal title :
IET Optoelectronics
Pages :
69-75
Publisher :
Institution of Engineering and Technology
Publication date :
2008
ISSN :
1751-8768
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
The authors present the design, fabrication and characterisation of passive photonic components using InP optical wire technology. These components are straight and curved waveguides as well as Y-junctions. Their ultimate ...
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The authors present the design, fabrication and characterisation of passive photonic components using InP optical wire technology. These components are straight and curved waveguides as well as Y-junctions. Their ultimate use is to be integrated within active nanophotonic functions and this is implicitly targeted in the different parts of this process work. First, propagation and excess losses because of a bend or Y-junction are modelled using a beam propagation method or a finite difference time domain method. Then, the technological process used to fabricate these components is presented; it is mainly based on e-beam direct writing and inductively coupled plasma deep etching. Finally, the different losses are measured and results are compared with the theory. The authors demonstrate, thus, that the use of submicron waveguides (or optical wire) can lead to very compact optical passive functions on InP since very small radius bends and wide angle Y-junctions showed almost low excess loss.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Collections :
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
Source :
Harvested from HAL
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