Gold nanoparticle-pentacene memory-transistors

Novembre, C.; Guérin, David; Lmimouni, Kamal; Gamrat, C.; Vuillaume, D.

Document type :

Article dans une revue scientifique: Article original

DOI :

10.1063/1.2896602

Title :

Gold nanoparticle-pentacene memory-transistors

Author(s) :

Novembre, C. [Auteur]
Guérin, David [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lmimouni, Kamal [Auteur]

Gamrat, C. [Auteur]
Vuillaume, D. [Auteur]

Journal title :

Applied Physics Letters

Pages :

103314-1-3

Publisher :

American Institute of Physics

Publication date :

2008-03-14

ISSN :

0003-6951

HAL domain(s) :

Physique [physics]

English abstract : [en]

We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an ...
Show more >We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift (22 V) and on/off drain current ratio of ~3x104 are obtained. The hole field-effect mobility of the transistor is similar in the on and off states (less than a factor 2). Charge retention times up to 4500 s are observed. The memory effect is mainly attributed to the Au nanoparticlesShow less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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