Titre :

RF small signal analysis of Schottky-barrier p-MOSFETs

Auteur(s) :

Valentin, R. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Raskin, J.P. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Larrieu, G. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Dambrine, Gilles [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Lim, T.C. [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Breil, N. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Danneville, François [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]

Titre de la revue :

IEEE Transactions on Electron Devices

Pagination :

1192-1202

Éditeur :

Institute of Electrical and Electronics Engineers

Date de publication :

2008

ISSN :

0018-9383

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

This paper presents a detailed RF study for source/drain Schottky-barrier (SB) MOSFETs. Using on-wafer -parameters, high-frequency (HF) figures-of-merit (FoMs) and small-signal equivalent circuits (SSEC) are first extracted ...
Lire la suite >This paper presents a detailed RF study for source/drain Schottky-barrier (SB) MOSFETs. Using on-wafer -parameters, high-frequency (HF) figures-of-merit (FoMs) and small-signal equivalent circuits (SSEC) are first extracted and discussed for a -gate-length SB MOSFET. Then, using ac simulations, HF FoM's sensitivity along SB height and underlap length variations are subsequently presented. The whole study provides, for SB MOSFETs, a deep understanding of key ac-element (transconductances and capacitances) behavior as well as process-parameter optimization to achieve the best HF FoMs.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL