Title :

In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives

Author(s) :

Durand, Cédric [Auteur correspondant]
Laboratoire Composants Microsystèmes [LCMS]
STMicroelectronics [Crolles] [ST-CROLLES]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Casset, Fabrice [Auteur]
Laboratoire Composants Microsystèmes [LCMS]
Renaux, Philippe [Auteur]
Laboratoire Caratérisation et Fiabilité des Microsystèmes [LCFM]
Abelé, Nicolas [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Legrand, Bernard [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Renaud, Denis [Auteur]
Services des Opérations Technologiques [SDOT]
Ollier, Eric [Auteur]
Laboratoire Composants Microsystèmes [LCMS]
Ancey, Pascal [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
M. Ionescu, Adrian [Auteur]
Institut de théorie des phénomènes physiques [EPFL]
Buchaillot, Lionel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

IEEE Electron Device Letters

Pages :

494-496

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2008-05-05

ISSN :

0741-3106

English keyword(s) :

In-IC integration
in-plane resonator
nanometerscale resonator
resonant suspended gate (RSG) MOSFET
silicon on nothing
SON

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

A14-MHz in-plane nanoelectromechanical resonator based on a resonant-suspended-gate (RSG) MOSFET principle and integrated in a front-end process is demonstrated. The devices are in-plane flexural vibration mode beams (L = ...
Show more >A14-MHz in-plane nanoelectromechanical resonator based on a resonant-suspended-gate (RSG) MOSFET principle and integrated in a front-end process is demonstrated. The devices are in-plane flexural vibration mode beams (L = 10 μm, w = 165 nm, and h = 400 nm) with 120-nm gaps. This letter details the design and process flow fabrication steps. Then, the electrical device characteristics are demonstrated, comprising static and dynamic studies around the resonant frequency. Devices enable the comparison of a pure capacitive detection with the RSG-MOSFET-based detection on the same component, showing a 4.3-dB-huge peak. Due to its output signal amplification and in-IC integration potentialities, the RSG-MOSFET-based detection is ideal for any type of nanoelectromechanical structure displacement detection.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL