Thermal behaviour of gate-less AlGaN/GaN ...
Type de document :
Communication dans un congrès avec actes
Titre :
Thermal behaviour of gate-less AlGaN/GaN heterostructures
Auteur(s) :
Benbakhti, Brahim [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rousseau, Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Soltani, Ali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laureyns, Jacky [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
De Jaeger, Jean-Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rousseau, Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Soltani, Ali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laureyns, Jacky [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
De Jaeger, Jean-Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la manifestation scientifique :
2nd European Microwave Integrated Circuits Conference, EuMIC 2007
Ville :
Munich
Pays :
Allemagne
Date de début de la manifestation scientifique :
2007-10-08
Titre de l’ouvrage :
Proceedings of the 2nd European Microwave Integrated Circuits Conference, EuMIC 2007
Éditeur :
IEEE, Piscataway, NJ, USA
Date de publication :
2007
Mot(s)-clé(s) en anglais :
Aluminum gallium nitride
Gallium nitride
Transmission line measurements
Electric variables measurement
Power generation
Lattices
Temperature
Thermal degradation
Heating
Power transmission lines
Gallium nitride
Transmission line measurements
Electric variables measurement
Power generation
Lattices
Temperature
Thermal degradation
Heating
Power transmission lines
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
For power applications, the dissipated power in GaN based devices becomes very significant and consequently can generate a very important self-heating effect in the component. The self-heating in the device increases ...
Lire la suite >For power applications, the dissipated power in GaN based devices becomes very significant and consequently can generate a very important self-heating effect in the component. The self-heating in the device increases considerably the lattice or the operating temperature and the transport properties are then degraded. To explain and to understand the physical phenomena observed in experiment for power components, it requires to introduce heating effects. The goal of this study is to estimate self-heating effects on the static characteristics of TLM (Transmission Line Model) AlGaN/GaN structures. For this objective, a developed physical thermal model is used in order to study the electrical and thermal phenomena in a coupled way. These studies are validated by electrical measurements regarding I-V characteristics and also by optic measurements using micro-Raman spectroscopy.Lire moins >
Lire la suite >For power applications, the dissipated power in GaN based devices becomes very significant and consequently can generate a very important self-heating effect in the component. The self-heating in the device increases considerably the lattice or the operating temperature and the transport properties are then degraded. To explain and to understand the physical phenomena observed in experiment for power components, it requires to introduce heating effects. The goal of this study is to estimate self-heating effects on the static characteristics of TLM (Transmission Line Model) AlGaN/GaN structures. For this objective, a developed physical thermal model is used in order to study the electrical and thermal phenomena in a coupled way. These studies are validated by electrical measurements regarding I-V characteristics and also by optic measurements using micro-Raman spectroscopy.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Source :