Title :

X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

Author(s) :

Sarazin, Nicolas [Auteur]
Alcatel-Thales III-V Lab [III-V Lab ]
Jardel, Olivier [Auteur]
Alcatel-Thales III-V Lab [III-V Lab ]
Morvan, Erwan [Auteur]
Alcatel-Thales III-V Lab [III-V Lab ]
Aubry, Raphaël [Auteur]
Alcatel-Thales III-V Lab [III-V Lab ]
Laurent, M. [Auteur]
Alcatel-Thales III-V Lab [III-V Lab ]
Magis, M. [Auteur]
Alcatel-Thales III-V Lab [III-V Lab ]
Tordjman, Maurice [Auteur]
Alcatel-Thales III-V Lab [III-V Lab ]
Alloui, M. [Auteur]
Alcatel-Thales III-V Lab [III-V Lab ]
Drisse, O. [Auteur]
Alcatel-Thales III-V Lab [III-V Lab ]
Di Persio, J. [Auteur]
Alcatel-Thales III-V Lab [III-V Lab ]
Di Forte-Poisson, Marie-Antoinette [Auteur]
Alcatel-Thales III-V Lab [III-V Lab ]
Delage, Sylvain Laurent [Auteur]
Alcatel-Thales III-V Lab [III-V Lab ]
Vellas, Nicolas [Auteur]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Théron, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Electronics Letters

Pages :

1317-1318

Publisher :

IET

Publication date :

2007

ISSN :

0013-5194

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

AlInN/AlN/GaN based HEMTs were fabricated on SiC substrate to demonstrate the high potentiality of these heterostructures. The presented results confirm the high performances reachable by AlInN based technology with an ...
Show more >AlInN/AlN/GaN based HEMTs were fabricated on SiC substrate to demonstrate the high potentiality of these heterostructures. The presented results confirm the high performances reachable by AlInN based technology with an output power of 6.8 W/mm at 10 GHz with a gate length of 0.25 µm. A good extrinsic transconductance value of 400 mS/mm was also measured on these transistors. The results are believed to be the best power results published about AlInN/GaN HEMTs.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL