Raman characterization of Mg<sup>+</sup> ion-implanted GaN

Boudart, B.; Guhel, Y.; Pesant, J.C.; Dhamelincourt, P.; Poisson, M.A.

Document type :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1088/0953-8984/16/2/006

Title :

Raman characterization of Mg<sup>+</sup> ion-implanted GaN

Author(s) :

Boudart, B. [Auteur correspondant]
Laboratoire Universitaire des Sciences Appliquées de Cherbourg [LUSAC]
Guhel, Y. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pesant, J.C. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dhamelincourt, P. [Auteur]
Centre d'Etudes et de Recherches Lasers et Applications [CERLA]
Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 [LASIRE]
Poisson, M.A. [Auteur]

Journal title :

Journal of Physics: Condensed Matter

Pages :

S49-S55

Publisher :

IOP Publishing [1989-....]

Publication date :

2004

ISSN :

0953-8984

English abstract : [en]

Mg+ ions were implanted at room temperature in n-type hexagonal GaN for the device isolation purposes. The implantation dose varied from 7.5 × 1012 to 1016 ions cm-2. We performed resonance Raman spectroscopy and DC ...
Show more >Mg+ ions were implanted at room temperature in n-type hexagonal GaN for the device isolation purposes. The implantation dose varied from 7.5 × 1012 to 1016 ions cm-2. We performed resonance Raman spectroscopy and DC electrical measurements in order to monitor the structural and electrical changes of non-annealed and annealed implanted GaN samples. Annealing was carried out at 900 °C for 30 s, these conditions being used to achieve good Ohmic contacts. The aim was to determine, on the one hand, the influence of ion doses on the device isolation and, on the other, to establish the order of the technological steps which should be made between ion implantation and Ohmic contact annealing. On increasing the implantation dose from 7.5 × 1012 to 2 × 1014 ions cm-2, an increase in the electrical isolation and a decrease in the photoluminescence (PL) were observed. For the highest dose, the implanted layer became conductive owing to a hopping mechanism and only the first-order phonon lines remained observable. After annealing, the implanted samples became conductive and the PL reappeared or increased compared with the non-annealed samples at same implantation doses, except for the sample implanted at the highest dose, which became insulating. Then, it is possible to achieve device electrical isolation by using a lower ion dose without thermal annealing or using a higher ion dose with thermal annealing.Show less >

Language :

Anglais

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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