1/f Tunnel Current Noise through Si-bound ...
Document type :
Pré-publication ou Document de travail
Title :
1/f Tunnel Current Noise through Si-bound Alkyl Monolayers
Author(s) :
Clement, Nicolas [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pleutin, Stephane [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Seitz, Oliver [Auteur]
Department of Materials and Interfaces [Rehovot, Israël]
Lenfant, Stephane [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vuillaume, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pleutin, Stephane [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Seitz, Oliver [Auteur]
Department of Materials and Interfaces [Rehovot, Israël]
Lenfant, Stephane [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vuillaume, Dominique [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
HAL domain(s) :
Physique [physics]/Matière Condensée [cond-mat]/Systèmes mésoscopiques et effet Hall quantique [cond-mat.mes-hall]
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
English abstract : [en]
We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f γ power spectrum noise with 1< γ <1.2. ...
Show more >We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f γ power spectrum noise with 1< γ <1.2. We observe a slight bias-dependent background of the normalized current noise power spectrum (SI/I²). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise, SI, scales with . A model is proposed showing qualitative agreements with our experimental data.Show less >
Show more >We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f γ power spectrum noise with 1< γ <1.2. We observe a slight bias-dependent background of the normalized current noise power spectrum (SI/I²). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise, SI, scales with . A model is proposed showing qualitative agreements with our experimental data.Show less >
Language :
Anglais
Comment :
Phys. Rev. B, in press
Source :
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