Title :

A 0.15µm 60GHz high-power composite channel GaInAs/InP HEMT with low gate current

Author(s) :

Boudrissa, Mustafa [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delos, Elisabet [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wallart, X. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Théron, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

IEEE Electron Device Letters

Pages :

257-259

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2001-06

ISSN :

0741-3106

English keyword(s) :

Indium phosphide
HEMTs
Impact ionization
Gold
Frequency
Microwave devices
MODFETs
Power generation
Substrates
Ohmic contacts

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

This letter presents recent improvements and experimental results provided by GaInAs/InP composite channel high electron mobility transistors (HEMT). The devices exhibit good dc and rf performance. The 0.15-μm gate length ...
Show more >This letter presents recent improvements and experimental results provided by GaInAs/InP composite channel high electron mobility transistors (HEMT). The devices exhibit good dc and rf performance. The 0.15-μm gate length devices have saturation current density of 750 mA/mm at V/sub GS/=+0 V. The Schottky characteristic is a typical reverse gate-to-drain breakdown voltage of -8 V. Gate current issued from impact ionization has been studied in these devices, in the first instance, versus drain extension. At 60 GHz, an output power of 385 mW/mm has been obtained in such a device with a 5.3 dB linear gain and 41% drain efficiency which constitutes the state-of-the-art. These results studied are the first reported for a composite channel Al/sub 0.65/In/sub 0.35/As/Ga/sub 0.47/In/sub 0.53/As/InP HEMT on an InP substrate.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL