Electron-phonon coupling and optical ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
Electron-phonon coupling and optical transitions for indirect-gap semiconductor nanocrystals
Auteur(s) :
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lannoo, Michel [Auteur]
Laboratoire matériaux et microélectronique de Provence [L2MP]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lannoo, Michel [Auteur]
Laboratoire matériaux et microélectronique de Provence [L2MP]
Titre de la revue :
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Pagination :
193402/1-4
Éditeur :
American Physical Society
Date de publication :
2001-10-12
ISSN :
1098-0121
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
We show that it is possible to perform full microscopic calculations of the phonon-assisted and no-phonon radiative transitions in silicon nanocrystals. These are based on a tight-binding Hamiltonian for the electron and ...
Lire la suite >We show that it is possible to perform full microscopic calculations of the phonon-assisted and no-phonon radiative transitions in silicon nanocrystals. These are based on a tight-binding Hamiltonian for the electron and electron-phonon part together with a valence force-field model for phonons. We predict an unexpected large broadening of the luminescence peaks attributed to the breaking of bulk selection rules and to multiphonon effects in the acoustic range. We also find that phonon-assisted transitions dominate over the full range of sizes. These results are compared to previous estimates in the effective-mass approximation and are used to discuss available experimental dataLire moins >
Lire la suite >We show that it is possible to perform full microscopic calculations of the phonon-assisted and no-phonon radiative transitions in silicon nanocrystals. These are based on a tight-binding Hamiltonian for the electron and electron-phonon part together with a valence force-field model for phonons. We predict an unexpected large broadening of the luminescence peaks attributed to the breaking of bulk selection rules and to multiphonon effects in the acoustic range. We also find that phonon-assisted transitions dominate over the full range of sizes. These results are compared to previous estimates in the effective-mass approximation and are used to discuss available experimental dataLire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :