(Zr/Ti) ratio effect on RF magnetron ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
(Zr/Ti) ratio effect on RF magnetron sputtered lead titanate zirconate films
Auteur(s) :
Titre de la revue :
Integrated Ferroelectrics
Pagination :
229-238
Éditeur :
Taylor & Francis
Date de publication :
2001
ISSN :
1058-4587
Mot(s)-clé(s) en anglais :
Pb(ZrxTi1−x)O3
various (Zr/Ti)
rf sputtering
dielectric
ferroelectric
various (Zr/Ti)
rf sputtering
dielectric
ferroelectric
Discipline(s) HAL :
Physique [physics]
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Résumé en anglais : [en]
Sputtered Pb(ZrxTi1−x)O3 thin films with various (Zr/Ti) compositions ranging from 15/85 to 70/30 were grown and characterised in terms of structural and electrical properties. PZT thin films, with 0.7–0.8μm thickness, ...
Lire la suite >Sputtered Pb(ZrxTi1−x)O3 thin films with various (Zr/Ti) compositions ranging from 15/85 to 70/30 were grown and characterised in terms of structural and electrical properties. PZT thin films, with 0.7–0.8μm thickness, were deposited on Si/SiO2/Ti/Pt by sputtering followed by conventional annealing. The sputtering conditions were the same for all the compositions. There were no apparent differences in crystallographic orientation as a function of Zr/Ti and the films a-lattice constant evolution is not exactly identical to the one of bulk ceramics. The permittivity increases when the Zr concentration increases and decreases just after the mor-photropic composition i.e. Zr-rich films. The ferroelectric properties are very sensitive to the Zr/Ti ratio. For example, the coercive field increases when the Ti concentration in the film increases.Lire moins >
Lire la suite >Sputtered Pb(ZrxTi1−x)O3 thin films with various (Zr/Ti) compositions ranging from 15/85 to 70/30 were grown and characterised in terms of structural and electrical properties. PZT thin films, with 0.7–0.8μm thickness, were deposited on Si/SiO2/Ti/Pt by sputtering followed by conventional annealing. The sputtering conditions were the same for all the compositions. There were no apparent differences in crystallographic orientation as a function of Zr/Ti and the films a-lattice constant evolution is not exactly identical to the one of bulk ceramics. The permittivity increases when the Zr concentration increases and decreases just after the mor-photropic composition i.e. Zr-rich films. The ferroelectric properties are very sensitive to the Zr/Ti ratio. For example, the coercive field increases when the Ti concentration in the film increases.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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- https://hal.archives-ouvertes.fr/hal-00152474/document
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